1 TGP2104 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features and performance ? frequency range: 30-40 ghz ? 3.5 db nominal insertion loss ? 10 deg phase error @ 35 ghz ? 0. 1 db amplitude error @ 35 ghz ? positive control voltage ? 0.25m 3mi phemt technology ? chip dimensions: 0.93 x 0.74 x 0.10 mm (0.037 x 0.029 x 0.004 inches) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) amplitude error (db) 140 145 150 155 160 165 170 175 180 185 190 phase (deg) measured performance primary applications ? military radar ? transmit / receive product description the triquint TGP2104 is a 180 digital phase shifter mmic design using triquint?s proven 0.25 m three metal interconnect (3mi) phemt process. the TGP2104 will support a variety of ka- band phased array applications including military radar. this design utilizes a compact topology that achieves a 0.69 mm 2 die area and high performance. the TGP2104 provides a 180 digital phase shift function with a nominal 3.5 db insertion loss and maximum 15 phase shift error over a bandwidth of 30- 40 ghz. the TGP2104 requires no off-chip components and operates with a 5v control voltage. each device is rf tested on-wafer to ensure performance compliance. the device is available in chip form. lead-free and rohs compliant -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) s21 (db) state 0 state 1 30 - 40 ghz 180 phase shifter datasheet subject to change without notice
2 TGP2104 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings symbol parameter value notes v 1 , v 2 control voltage 8 v 1 / 2 / i c control supply current 1 ma 1 / 2 / p in input continuous wave power 20 dbm 1 / 2 / p d power dissipation 0.392 w 1 / 2 / t ch operating channel temperature 200 c 3 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d 3 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
3 TGP2104 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii rf characterization table (t a = 25 c, nominal) (v 1 =v 2 = 5v) parameter test conditions typ units insertion loss 30 - 40 ghz 3.5 db max amplitude error 30 - 40 ghz 1 db max phase shift error 30 - 40 ghz 15 deg input return loss 30 - 40 ghz 12 db output return loss 30 - 40 ghz 12 db note: the rf characteristics of typical devices are determined by fixtured measurements. state table state v1 v2 phase shift 0 5 v 0 v reference 15 v 5 v 1 8 0 o
4 TGP2104 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com median lifetime (tm) vs. channel temperature table iii thermal information parameter test conditions tch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside of die) v 1 = v 2 = 5 v i 2 = 10 ua pdiss = 50 uw tbaseplate=70 c 70 204 >1 e 9
5 TGP2104 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 25 30 35 40 45 50 frequency (ghz) amplitude error (db) 140 145 150 155 160 165 170 175 180 185 190 phase (deg) -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 20 25 30 35 40 45 50 frequency (ghz) s21 (db) state 0 state 1
6 TGP2104 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data -30 -25 -20 -15 -10 -5 0 20 25 30 35 40 45 50 frequency (ghz) s22 (db) state 0 state 1 -30 -25 -20 -15 -10 -5 0 20 25 30 35 40 45 50 frequency (ghz) s11 (db) state 0 state 1
7 TGP2104 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing units: millimeters (inches) thickness: 0.102 (0.004) (reference only) chip edge to bond pad dimensions are shown to center of bond pads. chip size tolerance: 0.051 (0.002) rf ground through backside bond pad #1 (rf input) 0.076 x 0.150 (0.003 x 0.006) bond pad #1 (rf output) 0.076 x 0.150 (0.003 x 0.006) bond pad #3 (v1) 0.100 x 0.100 (0.004 x 0.004) bond pad #4 (v2) 0.100 x 0.100 (0.004 x 0.004)
8 TGP2104 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com - rf input and output should have two 1 mil bond wires - input and output flares are 0.010" x 0.025" on 0.010" alumina substrate v1 = 5 v v2 = 0 v, 5 v gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. chip assembly & bonding diagram
9 TGP2104 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c. assembly process notes
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